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IXFP3N50PM

MOSFET 2.7 Amps 500V 2.0 Ohms Rds

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SeekIC No. : 00154217 Detail

IXFP3N50PM: MOSFET 2.7 Amps 500V 2.0 Ohms Rds

IXFP3N50PM Data Sheet

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Part Number:
IXFP3N50PM
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 2 Ohms


Parameters:

Technical/Catalog InformationIXFP3N50PM
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs2 Ohm @ 1.8A, 10V
Input Capacitance (Ciss) @ Vds 409pF @ 25V
Power - Max36W
PackagingTube
Gate Charge (Qg) @ Vgs9.3nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFP3N50PM
IXFP3N50PM



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