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IXFH9N80Q

MOSFET 9 Amps 800V 1.1 Rds

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SeekIC No. : 00150888 Detail

IXFH9N80Q: MOSFET 9 Amps 800V 1.1 Rds

IXFH9N80Q Data Sheet

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Part Number:
IXFH9N80Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 9 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.1 Ohms
Package / Case : TO-247AD


Features:

· IXYS advanced low Qg process
· Low gate charge and capacitances
    - easier to drive
    - aster switching
·International standard packages
· Low RDS (on)
· Unclamped Inductive Switching (UIS) ated
· Molding epoxies meet UL 94 V-0 lammability classification




Specifications

Symbol Test Conditions
Maximum
Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
800
800
V
V
VGS
VGSM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse widthlimited by TJM
TC = 25°C
9
36
9
A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C
20
700
mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5
V/ns
PD TC = 25°C
180
W
TJ
TJM
Tstg		  
-55 ... +150
150
-55 ... +150


TL 1.6 mm (0.063 in.) from case for 10 s
300
MD Mounting torque TO-264
1.13/10
Nm/lb.in.
Weight TO-247
TO-268
6
4
g



Parameters:

Technical/Catalog InformationIXFH9N80Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH9N80Q
IXFH9N80Q



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