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IXFH80N15Q

MOSFET 80 Amps 150V 0.0225 Rds

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SeekIC No. : 00164387 Detail

IXFH80N15Q: MOSFET 80 Amps 150V 0.0225 Rds

IXFH80N15Q Data Sheet

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Part Number:
IXFH80N15Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0225 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-247AD
Resistance Drain-Source RDS (on) : 0.0225 Ohms


Features:

· Low gate charge
· International standard packages
· Epoxy meet UL 94 V-0, flammability classification
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Avalanche energy and current rated
· Fast intrinsic Rectifier


Parameters:

Technical/Catalog InformationIXFH80N15Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs*
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH80N15Q
IXFH80N15Q



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