MOSFET 80 Amps 100V 0.125 Rds
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.0125 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
Symbol |
Test Conditions |
Max. Ratings |
VDSX VDGX |
TJ = 25 to 150 TJ = 25 to 150;RGS = 1 M |
100 V 100 V |
VGS VGSM |
Continuous Transient |
±20 V ±30 V |
ID25 IL(RMS) IDM IAR |
TC = 25 Lead current limit TC = 25, pulse width limited by TJM T = 25 |
80 A 75 A 320 A 80 A |
EAR EAS |
TC = 25 |
50 mJ 2.5 J |
dv/dt | IS IDM, di/dt 100 A/s,VDD VDSS, T 150, R = 2 | 5 V/ns |
PD | TC = 25 | 300 W |
TVJ TVJM Tstg |
-55 ... +150 150 -55 ... +150 | |
TL |
300 | |
Md | Mounting torque |
1.13/10 Nm/lb.in. |
Technical/Catalog Information | IXFH80N10 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4800pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH80N10 IXFH80N10 |