MOSFET HiPerFETTM Power MOSFET
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 85 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
Resistance Drain-Source RDS (on) : | 0.009 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
Technical/Catalog Information | IXFH80N085 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 85V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4800pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH80N085 IXFH80N085 |