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IXFH7N90Q

MOSFET 7 Amps 900V 1.5W Rds

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SeekIC No. : 00153855 Detail

IXFH7N90Q: MOSFET 7 Amps 900V 1.5W Rds

IXFH7N90Q Data Sheet

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Part Number:
IXFH7N90Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 7 A
Drain-Source Breakdown Voltage : 900 V
Package / Case : TO-247AD


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL94V-0 flammability classification


Parameters:

Technical/Catalog InformationIXFH7N90Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C7A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs56nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH7N90Q
IXFH7N90Q



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