IXFH7N80 Selling Leads, Price trend , Ixys, IXFH7N80 DataSheet download, circuit diagram from SeekIC.com

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IXFH7N80: MOSFET 7 Amps 800V

IXFH7N80 Data Sheet

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Part Number:: IXFH7N80
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	7 A
Resistance Drain-Source RDS (on) :	1.4 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 1.4 Ohms
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-247AD

Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

Application

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

Parameters:

Technical/Catalog Information	IXFH7N80
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IXFH7N80 IXFH7N80

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IXFH7N80

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