IXFH75N10Q Selling Leads, Price trend , Ixys, IXFH75N10Q DataSheet download, circuit diagram from SeekIC.com

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IXFH75N10Q: MOSFET 75 Amps 100V 0.02 Rds

IXFH75N10Q Data Sheet

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Part Number:: IXFH75N10Q
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	75 A
Resistance Drain-Source RDS (on) :	0.02 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.02 Ohms
Package / Case : TO-247AD

Parameters:

Technical/Catalog Information	IXFH75N10Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	3700pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH75N10Q IXFH75N10Q

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IXFH75N10Q

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