IXFH75N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.02 Ohms
Package / Case : TO-247AD


Description

The IXFH75N10 is one member of the N-channel enhancement mode which can be used in DC-DC converters,synchronous rectification,battery chargers, switched-mode and resonant-mode power supplies,DC choppers,AC motor control,temperature and lighting controls and low voltage relays.The Advantages of it are three points:(1)easy to mount with 1 screw (TO-247) (isolated mounting screw hole);(2)space savings;(3)high power density.

The absolute maximum ratings of the IXFH75N10 can be summarized as:(1)Vdss (TJ=25 to 150):100 V;(2)VDGR (TJ=25 to 150;RGS=1 M):100 V;(3)VGS:+/-20 V;(4)VGSM:+/-30 V;(5)Md:1.13/10 Nm/lb.in.;(6)TL (1.6 mm (0.062 in.) from case for 10 s):300;(7)TJ:-55 to +150;(8)TJM:150;(9)Tstg:-55 to +150;(10)PD (TC=25):300 W.

Features of it are:(1)international standard packages;(2)low RDS (on) HDMOSTM process;(3)rugged polysilicon gate cell structure;(4)unclamped inductive switching (UIS) rated;(5)low package inductance-easy to drive and to protect;(6)fast intrinsic rectifier.If you want to know more information such as the electrical characteristics about the IXFH75N10,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IXFH75N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	20 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	260nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH75N10 IXFH75N10