MOSFET 70 Amps 150V 0.028 Rds
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 70 A | ||
Resistance Drain-Source RDS (on) : | 0.028 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
Symbol |
Test Conditions |
Maximum |
Ratings |
VDSS |
TJ = 25 to 150 |
150 |
V |
VDGR |
TJ = 25 to 150; RGS = 1 M |
150 |
V |
VGS |
Continuous |
±20 |
V |
VGSM |
Transient |
±30 |
V |
ID25 |
TC = 25 |
70 |
A |
IDM |
TC = 25, pulse width limited by TJM |
280 |
A |
IAR |
TC = 25 |
70 |
A |
EAR |
TC = 25 |
30 |
mJ |
EAS |
TC = 25 |
1.0 |
J |
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150, RG = 2 |
5 |
V/ns |
PD |
TC = 25 |
300 |
W |
TJ |
-55 ... +150 |
||
TJM |
150 |
||
Tstg |
-55 ... +150 |
||
TL |
1.6 mm (0.062 in.) from case for 10 s |
300 |
|
Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
Weight |
TO-247 AD |
6 |
g |
TO-268 |
4 |
g |
Technical/Catalog Information | IXFH70N15 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 70A |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 180nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH70N15 IXFH70N15 |