Position: Home  > All Categories> Integrated Circuits (ICs) > IXFH70N15

IXFH70N15

MOSFET 70 Amps 150V 0.028 Rds

product image

IXFH70N15 Picture
See larger image
SeekIC No. : 00159076 Detail

IXFH70N15: MOSFET 70 Amps 150V 0.028 Rds

IXFH70N15 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFH70N15
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Continuous Drain Current : 70 A
Package / Case : TO-247AD


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
  - easy to drive and to protect
• Fast intrinsic Rectifier



Specifications

Symbol
 Test Conditions
Maximum
Ratings
VDSS
 TJ = 25 to 150
150
V
VDGR
 TJ = 25 to 150; RGS = 1 M
150
V
VGS
 Continuous
±20
V
VGSM
 Transient
±30
V
ID25
 TC = 25
70
A
IDM
 TC = 25, pulse width limited by TJM
280
A
IAR
 TC = 25
70
A
EAR
 TC = 25
30
mJ
EAS
 TC = 25
1.0
J
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150, RG = 2
5
V/ns
PD
 TC = 25
300
W
TJ
  
-55 ... +150
TJM
  
150
Tstg
  
-55 ... +150
TL
 1.6 mm (0.062 in.) from case for 10 s
300
Md
 Mounting torque
1.13/10
Nm/lb.in.
Weight
 TO-247 AD
6
g
 TO-268
4
g



Parameters:

Technical/Catalog InformationIXFH70N15
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs28 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH70N15
IXFH70N15



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Isolators
HCPL062N
HCPL316J
Crystals and Oscillators
WT325BI0030.000000
2SB49
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Audio Products
HUC1002
WM-64CT
View more