IXFH6N90

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 6A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 130nC @ 10V
Drain to Source Voltage (Vdss): 900V
Package / Case: TO-247-3
Input Capacitance (Ciss) @ Vds: 2600pF @ 25V
Power - Max: 180W
Manufacturer: IXYS
Series: HiPerFET™
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 3A, 10V


Features:

• International standard packages
• Low R_{DS (on)} HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	900 1000	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	6 24 6	A A A
EAR	TC = 25°C	18	mJ
dv/dt	IS   IDM, di/dt   100 A/s, VDD   VDSS, TJ 150°C, RG = 2 	5	V/ns
PD	TC = 25°C	180	W
TJ TJM Tstg		-55 ... +150 150 Tstg -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	300	°C
Md	Mounting torque	1.13/10	Nm/lb.in.
Weight		TO-204 = 18 g, TO-247 = 6 g

Parameters:

Technical/Catalog Information	IXFH6N90
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	1.8 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH6N90 IXFH6N90