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IXFH6N100Q

MOSFET 6 Amps 1000V 2 Rds

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SeekIC No. : 00159242 Detail

IXFH6N100Q: MOSFET 6 Amps 1000V 2 Rds

IXFH6N100Q Data Sheet

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Part Number:
IXFH6N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.9 Ohms
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXFH6N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs*
Input Capacitance (Ciss) @ Vds 2200pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH6N100Q
IXFH6N100Q



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