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IXFH6N100F

MOSFET HiPerRF Power Mosfet 1000V 6A

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SeekIC No. : 00151229 Detail

IXFH6N100F: MOSFET HiPerRF Power Mosfet 1000V 6A

IXFH6N100F Data Sheet

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Part Number:
IXFH6N100F
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.9 Ohms
Package / Case : TO-247AD


Features:

RF capable MOSFETs
Double metal process for low gate resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
    - easy to drive and to protect
Fast intrinsic rectifier


Application

DC-DC converters
Switched-mode and resonant-mode power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers


Specifications

Symbol
Test Conditions
Maximum Ratings
VDSS
 TJ = 25°C to 150°C
1000
V
VDGR
 TJ = 25°C to 150°C; RGS = 1 M
1000
V
VGS
 Continuous
±20
V
VGSM
 Transient
±30
V
ID25
 TC = 25°C
6
A
IDM
 TC = 25°C, pulse width limited by TJM
24
A
IAR
 TC = 25°C
6
A
EAR
 TC = 25°C
20
mJ
EAS
 TC = 25°C
500
mJ
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
15
V/ns
PD
 TC = 25°C
180
W
TJ
  
-55to+150
°C
TJM
  
150
°C
Tstg
  
-55to+150
°C
TL
 1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
 Mounting torque TO-247
1.13/10 Nm/lb.in.
Weight
 TO-247
TO-268
6
4
g
g



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