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IXFH6N100

MOSFET 1KV 6A

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SeekIC No. : 00151470 Detail

IXFH6N100: MOSFET 1KV 6A

IXFH6N100 Data Sheet

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Part Number:
IXFH6N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 6 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 2 Ohms
Package / Case : TO-247AD


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
900
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
6
24
6
A
A
A
EAR
TC = 25°C
18
mJ
dv/dt
IS   IDM, di/dt   100 A/s, VDD   VDSS,
TJ 150°C, RG = 2 
5
V/ns
PD
TC = 25°C
180
W
TJ
TJM
Tstg
-55 ... +150
150
Tstg -55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g



Description

 


Parameters:

Technical/Catalog InformationIXFH6N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs130nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH6N100
IXFH6N100



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