IXFH60N25Q Selling Leads, Price trend , Ixys, IXFH60N25Q DataSheet download, circuit diagram from SeekIC.com

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IXFH60N25Q: MOSFET 60 Amps 250V 0.047 Rds

IXFH60N25Q Data Sheet

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Part Number:: IXFH60N25Q
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	60 A
Resistance Drain-Source RDS (on) :	0.047 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.047 Ohms
Package / Case : TO-247AD

Parameters:

Technical/Catalog Information	IXFH60N25Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	47 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH60N25Q IXFH60N25Q

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IXFH60N25Q

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