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IXFH58N20Q

MOSFET 200V 58A

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SeekIC No. : 00159080 Detail

IXFH58N20Q: MOSFET 200V 58A

IXFH58N20Q Data Sheet

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Part Number:
IXFH58N20Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 58 A
Resistance Drain-Source RDS (on) : 0.04 Ohms
Package / Case : TO-247AD


Features:

· IXYS advanced low Qg process
· International standard packages
· Low gate charge and capacitance
    - easier to drive
    - faster switching
· Low RDS (on)
· Unclamped Inductive Switching (UIS) rated
· Molding epoxies meet UL 94 V-0 flammability classification


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
200
200
V
V
VGS
VGSM
 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
 TC = 25
TC = 25, pulse width limited by TJM
TC = 25
58
232
58
A
A
A
EAR
EAS
 TC = 25
TC = 25
30
1.0
mJ
J
dv/dt
 IS IDM, di/dt 100 A/ms, VDD VDSS,
TJ 150, RG = 2 W
5
V/ns
PD
 TC = 25
300
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150


TL
 1.6 mm (0.062 in.) from case for 10 s
300
Md
 Mounting torque
1.13/10
Nm/lb.in.
Weight
 TO-247
TO-268
6
4
g
g



Parameters:

Technical/Catalog InformationIXFH58N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH58N20Q
IXFH58N20Q



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