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IXFH4N100Q

MOSFET 4 Amps 1000V 2.8 Rds

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SeekIC No. : 00151481 Detail

IXFH4N100Q: MOSFET 4 Amps 1000V 2.8 Rds

IXFH4N100Q Data Sheet

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Part Number:
IXFH4N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 3 Ohms
Package / Case : TO-247AD


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
   - easier to drive
   - faster switching
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification


Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 M?
1000
1000
V
V
VGES
VGEM
 Continuous
Transient
±20
±30
V
V
IC25
IDM
IAR
TC = 25
TC = 25, pulse width limited by TJM
TC = 25
4
16
4
A
A
A
EAR
EAS
TC = 25
TC = 25
20
700
mJ
J
dv/dt
I IDM, di/dt 100 A/s, V VDSS,
TJ 150, RG = 2
5
V/ns
PD
 TC = 25
150
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150


TL
1.6 mm (0.062 in.) from case for 10 s
300
Md
 Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g




Parameters:

Technical/Catalog InformationIXFH4N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH4N100Q
IXFH4N100Q



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