IXFH40N30Q

MOSFET 300V 40A

product image

IXFH40N30Q Picture
SeekIC No. : 00158254 Detail

IXFH40N30Q: MOSFET 300V 40A

floor Price/Ceiling Price

Part Number:
IXFH40N30Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/12

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.08 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : TO-247AD


Features:

• IXYS advanced low Qg process
• International standard packages
• Low gate charge and capacitance - easier to drive - faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL94V-0 flammability classification



Specifications

VDSS
TJ = 25°C to 150°C
300
V
VDGR
TJ = 25°C to 150°C; RGS = 1 M
300
V
VGS
Continuous
±20
V
VGSM
Transient ±30
V
ID25
TC = 25°C
40
A
IDM
TC = 25°C, 160
A
pulse width limited by TJM 40
A
IAR
TC = 25°C 30
A
EAR
TC = 25°C
1.0
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 2
5
V/ns
PD
TC = 25°C
300
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TL
1.6 mm (0.063 in) from case for 10 s 300
°C
Md
Mounting torque
0.9/6
1.13/10
Nm/lb.in
Weight TO-247 4
g
TO-268

6

g



Parameters:

Technical/Catalog InformationIXFH40N30Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs80 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH40N30Q
IXFH40N30Q



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Test Equipment
Optical Inspection Equipment
Industrial Controls, Meters
Audio Products
Cable Assemblies
View more