MOSFET 300V 40A
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 300 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 40 A | ||
Resistance Drain-Source RDS (on) : | 0.08 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
VDSS |
TJ = 25°C to 150°C | 300 |
V | ||
VDGR |
TJ = 25°C to 150°C; RGS = 1 M | 300 |
V | ||
VGS |
Continuous | ±20 |
V | ||
VGSM |
Transient | ±30 |
V | ||
ID25 |
TC = 25°C | 40 |
A | ||
IDM |
TC = 25°C, | 160 |
A | ||
pulse width limited by TJM | 40 |
A | |||
IAR |
TC = 25°C | 30 |
A | ||
EAR |
TC = 25°C | 1.0 |
mJ | ||
dv/dt |
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 2 |
5 |
V/ns | ||
PD |
TC = 25°C | 300 |
W | ||
TJ |
-55 ... +150 |
°C | |||
TJM |
150 |
°C | |||
Tstg |
-55 ... +150 |
°C | |||
TL |
1.6 mm (0.063 in) from case for 10 s | 300 |
°C | ||
Md |
Mounting torque |
0.9/6 |
1.13/10 |
Nm/lb.in | |
Weight | TO-247 | 4 |
g | ||
TO-268 |
6
|
g |
Technical/Catalog Information | IXFH40N30Q |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25° C | 40A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 3100pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 140nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH40N30Q IXFH40N30Q |