IXFH40N30 Selling Leads, Price trend , Ixys, IXFH40N30 DataSheet download, circuit diagram from SeekIC.com

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IXFH40N30: MOSFET 300V 40A

IXFH40N30 Data Sheet

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Part Number:: IXFH40N30
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/24

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	40 A
Resistance Drain-Source RDS (on) :	0.085 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.085 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : TO-247AD

Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier

Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays

Parameters:

Technical/Catalog Information	IXFH40N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4800pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH40N30 IXFH40N30

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IXFH40N30

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