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IXFH36N55Q2

MOSFET 36 Amps 550V 0.16 Rds

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SeekIC No. : 00158415 Detail

IXFH36N55Q2: MOSFET 36 Amps 550V 0.16 Rds

IXFH36N55Q2 Data Sheet

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Part Number:
IXFH36N55Q2
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 550 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.18 Ohms
Drain-Source Breakdown Voltage : 550 V
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXFH36N55Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs180 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4100pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs110nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH36N55Q2
IXFH36N55Q2



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