IXFH35N30 Selling Leads, Price trend , Ixys, IXFH35N30 DataSheet download, circuit diagram from SeekIC.com

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IXFH35N30: MOSFET 300V 35A

IXFH35N30 Data Sheet

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Part Number:: IXFH35N30
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	300 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	35 A
Resistance Drain-Source RDS (on) :	0.1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 35 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-247AD

Parameters:

Technical/Catalog Information	IXFH35N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4800pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	IXFH35N30 IXFH35N30

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IXFH35N30

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