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IXFH35N30

MOSFET 300V 35A

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SeekIC No. : 00158214 Detail

IXFH35N30: MOSFET 300V 35A

IXFH35N30 Data Sheet

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Part Number:
IXFH35N30
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 35 A
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-247AD


Parameters:

Technical/Catalog InformationIXFH35N30
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs100 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4800pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names IXFH35N30
IXFH35N30



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