IXFH32N50

MOSFET 500V 32A

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IXFH32N50 Picture
SeekIC No. : 00151478 Detail

IXFH32N50: MOSFET 500V 32A

floor Price/Ceiling Price

Part Number:
IXFH32N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : TO-247AD


Description

 

The IXFH32N50 is one member of the N-channel enhancement mode which can be used in DC-DC converters,synchronous rectification,battery chargers, switched-mode and resonant-mode power supplies,DC choppers,AC motor control,temperature and lighting controls and low voltage relays.The advantages of it are three points:(1)easy to mount with 1 screw (TO-247) (isolated mounting screw hole);(2)space savings;(3)high power density.

The absolute maximum ratings of the IXFH32N50 can be summarized as:(1)Vdss (TJ=25 to 150):500 V;(2)VDGR (TJ=25 to 150;RGS=1 M):500 V;(3)VGS:+/-20 V;(4)VGSM:+/-30 V;(5)Md:1.13/10 Nm/lb.in.;(6)TL (1.6 mm (0.062 in.) from case for 10 s):300;(7)TJ:-55 to +150;(8)TJM:150;(9)Tstg:-55 to +150;(10)PD (TC=25):360 W.

Features of it are:(1)international standard packages;(2)low RDS (on) HDMOSTM process;(3)rugged polysilicon gate cell structure;(4)unclamped inductive switching (UIS) rated;(5)low package inductance-easy to drive and to protect;(6)fast intrinsic rectifier.If you want to know more information such as the electrical characteristics about the IXFH32N50,please download the datasheet in www.seekic.com or www.chinaicmart.com .




Parameters:

Technical/Catalog InformationIXFH32N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs150 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 5700pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH32N50
IXFH32N50



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