MOSFET 500V 32A
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32 A | ||
Resistance Drain-Source RDS (on) : | 0.15 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247AD | Packaging : | Tube |
The IXFH32N50 is one member of the N-channel enhancement mode which can be used in DC-DC converters,synchronous rectification,battery chargers, switched-mode and resonant-mode power supplies,DC choppers,AC motor control,temperature and lighting controls and low voltage relays.The advantages of it are three points:(1)easy to mount with 1 screw (TO-247) (isolated mounting screw hole);(2)space savings;(3)high power density.
The absolute maximum ratings of the IXFH32N50 can be summarized as:(1)Vdss (TJ=25 to 150):500 V;(2)VDGR (TJ=25 to 150;RGS=1 M):500 V;(3)VGS:+/-20 V;(4)VGSM:+/-30 V;(5)Md:1.13/10 Nm/lb.in.;(6)TL (1.6 mm (0.062 in.) from case for 10 s):300;(7)TJ:-55 to +150;(8)TJM:150;(9)Tstg:-55 to +150;(10)PD (TC=25):360 W.
Features of it are:(1)international standard packages;(2)low RDS (on) HDMOSTM process;(3)rugged polysilicon gate cell structure;(4)unclamped inductive switching (UIS) rated;(5)low package inductance-easy to drive and to protect;(6)fast intrinsic rectifier.If you want to know more information such as the electrical characteristics about the IXFH32N50,please download the datasheet in www.seekic.com or www.chinaicmart.com .
Technical/Catalog Information | IXFH32N50 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 32A |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 5700pF @ 25V |
Power - Max | 360W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 300nC @ 10V |
Package / Case | TO-247AD |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH32N50 IXFH32N50 |