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IXFH30N50

MOSFET 30 Amps 500V 0.16 Rds

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SeekIC No. : 00159150 Detail

IXFH30N50: MOSFET 30 Amps 500V 0.16 Rds

IXFH30N50 Data Sheet

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Part Number:
IXFH30N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.16 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.16 Ohms
Package / Case : TO-247AD


Features:

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Diode


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls


Specifications

Symbol
Test conditions
Maximum
ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
30N5030
32N5032
30N50120
32N50128
30N5030
32N5032
A
A
A
A
A
A
EAS
EAR
TC = 25°C
TC = 25°C
1.5
35
J
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5
V/ns
PD
TC = 25°C
315
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mounting torque TO-247
1.13/10
Nm/lb.in.
Weight
  
6
g



Parameters:

Technical/Catalog InformationIXFH30N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs160 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 5700pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH30N50
IXFH30N50



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