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IXFH26N60Q

MOSFET 600V 26A

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SeekIC No. : 00158275 Detail

IXFH26N60Q: MOSFET 600V 26A

IXFH26N60Q Data Sheet

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Part Number:
IXFH26N60Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 26 A
Package / Case : TO-247AD


Features:

· Low gate charge
· International standard packages
·Epoxy meet UL 94 V-0, flammability classification
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Avalanche energy and current rated
· Fast intrinsic Rectifier


Specifications

Symbol
Test Conditions
Maximum
Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
600
600
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
26
104
26
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mj
j
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS, 
TJ 150°C, RG = 2
5
V/ns

 PD

 TC = 25°C

 360

 W

TJ
TJM
Tstg
-55 ... +150
150
Tstg -55 ... +150
°C
°C
°C

 TL

 1.6 mm (0.063 in) from case for 10 s

 300

 °C

Md
Mounting torque      TO-247
1.13/10
Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g



Parameters:

Technical/Catalog InformationIXFH26N60Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH26N60Q
IXFH26N60Q



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