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IXFH26N60P

MOSFET 600V 26A

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SeekIC No. : 00151007 Detail

IXFH26N60P: MOSFET 600V 26A

IXFH26N60P Data Sheet

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Part Number:
IXFH26N60P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 26 A


Features:

·Fast Recovery diode
·Unclamped Inductive Switching (UIS) rated
·International standard packages
·Low package inductance - easy to drive and to protect


Specifications

VDSS TJ = 25 to 150 600 V
VDGR TJ = 25 to 150; RGS = 1 M 600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC = 25 26 A
IDM TC = 25, pulse width limited by TJM 65 A
IAR TC = 25 26 A
EAR TC = 25 40 mJ
EAS TC = 25 1.2 J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 5 		10 V/ns
PD TC = 25 460 W
TJ   -55 ... +150
TJM   150
Tstg   -55 ... +150
TL 1.6 mm (0.062 in.) from case for 10 s
Plastic body		 300
250
Md Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in.
FC Mounting force (PLUS220) 11..65/2.5..15 N/lb
Weight TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD		 5.5
6.0
5.0
4.0		 g
g
g
g



Parameters:

Technical/Catalog InformationIXFH26N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C26A
Rds On (Max) @ Id, Vgs270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4150pF @ 25V
Power - Max460W
PackagingTube
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH26N60P
IXFH26N60P



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