IXFH26N60 Selling Leads, Price trend, IXFH26N60 DataSheet download, circuit diagram from SeekIC.com

Features: • International standard packages• EpoxymeetUL94V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Avalanche energy and current rated• Fast intrinsic RectifierSpecifications Symbol Test Con...

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SeekIC No. : 004381522 Detail

IXFH26N60: Features: • International standard packages• EpoxymeetUL94V-0, flammability classification• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Avalan...

IXFH26N60 Data Sheet

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Part Number:: IXFH26N60
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/23

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Product Details

Description

Features:

• International standard packages
• EpoxymeetUL94V-0, flammability classification
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier

Specifications

Symbol	Test Conditions	Maximum		Ratings
Symbol	Test Conditions	IXFH/ IXFT	IXFK	Ratings
V_DSSV_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	600 600	600 600	V V
V_GS V_GSM	Continuous Transient	±20 ±30	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25°C T_C= 25°C, pulse width limited by T_JM T_C= 25°C	26 104 26	28 112 28	A A A
E_AR	T_C = 25°C	50	50
E_AS	T_C= 25°C	1.5	1.5	mjj
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS, T_J 150°C, R_G = 2	5	5	V/ns
P_D	T_C = 25°C	360	460	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150		°C °C °C
TL	1.6 mm (0.063 in) from case for 10 s	300	300	°C
M_d	Mounting torque TO-247	1.13/100	.9/6	Nm/lb.in.
Weight		6	10	g

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IXFH26N60

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