IXFH26N50

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 26 A
Package / Case : TO-247AD


Features:

• International standard packages
• Low R_{DS (on)} HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier




Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays




Description

The IXFH26N50 is one member of the N-channel enhancement mode which can be used in DC-DC converters,synchronous rectification,battery chargers, switched-mode and resonant-mode power supplies,DC choppers,AC motor control,temperature and lighting controls and low voltage relays.The advantages of it are three points:(1)easy to mount with 1 screw (TO-247) (isolated mounting screw hole);(2)space savings;(3)high power density.

The absolute maximum ratings of the IXFH26N50 can be summarized as:(1)Vdss (TJ=25 to 150):500 V;(2)VDGR (TJ=25 to 150;RGS=1 M):500 V;(3)VGS:+/-20 V;(4)VGSM:+/-30 V;(5)Md:1.13/10 Nm/lb.in.;(6)TL (1.6 mm (0.062 in.) from case for 10 s):300;(7)TJ:-55 to +150;(8)TJM:150;(9)Tstg:-55 to +150;(10)PD (TC=25):300 W.

Features of it are:(1)international standard packages;(2)low RDS (on) HDMOSTM process;(3)rugged polysilicon gate cell structure;(4)unclamped inductive switching (UIS) rated;(5)low package inductance-easy to drive and to protect;(6)fast intrinsic rectifier.If you want to know more information such as the electrical characteristics about the IXFH26N50,please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IXFH26N50
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	200 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	160nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH26N50 IXFH26N50