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IXFH21N50Q

MOSFET 21 Amps 500V 0.25 Rds

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SeekIC No. : 00154065 Detail

IXFH21N50Q: MOSFET 21 Amps 500V 0.25 Rds

IXFH21N50Q Data Sheet

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Part Number:
IXFH21N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.25 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 21 A
Resistance Drain-Source RDS (on) : 0.25 Ohms
Package / Case : TO-247AD


Features:

·IXYS advanced low Qg process
·Low gate charge and capacitances
·easier to drive
·faster switching
·International standard packages
·Low RDS (on)
·Rated for unclamped Inductive load switching (UIS) rated
·Molding epoxies meet UL 94 V-0 flammability classification


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C.RGS=1M		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±30
±40
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C pulse width limited by TJM
TC = 25°C

21
84
21		 A
A
A
A


EAR
EAS
 TC = 25°C
 30
1.5
 0mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 15 V/ns
PD TC = 25°C 280 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque
1.13/10
 Nm/lb.in.
Weight TO-247
TO-268		 6
4		 g
g



Parameters:

Technical/Catalog InformationIXFH21N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3000pF @ 25V
Power - Max280W
PackagingTube
Gate Charge (Qg) @ Vgs84nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH21N50Q
IXFH21N50Q



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