IXFH20N80Q Selling Leads, Price trend , Ixys, IXFH20N80Q DataSheet download, circuit diagram from SeekIC.com

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IXFH20N80Q: MOSFET 800V 20A

IXFH20N80Q Data Sheet

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Part Number:: IXFH20N80Q
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.42 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.42 Ohms
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-247AD

Features:

• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier

Application

• Easy to mount
• Space savings
• High power density

Parameters:

Technical/Catalog Information	IXFH20N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	420 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH20N80Q IXFH20N80Q

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IXFH20N80Q

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