IXFH20N80Q Selling Leads, Price trend , Ixys, IXFH20N80Q DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00159261 Detail

IXFH20N80Q: MOSFET 800V 20A

IXFH20N80Q Data Sheet

Get Latest Price

Part Number:: IXFH20N80Q
Mfg:: Ixys
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IXFH 18N60P evaluate
Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
IXFH 28N50F evaluate
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
IXFH/IXFM42N20 evaluate
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.42 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.42 Ohms
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-247AD

Features:

• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier

Application

• Easy to mount
• Space savings
• High power density

Parameters:

Technical/Catalog Information	IXFH20N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	420 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH20N80Q IXFH20N80Q

Customers Who Bought This Item Also Bought

IXFH120N20P
US $$2.20 - 2.50 / Piece

Supply Ability:8000Week

View details
IXFH13N50
US $$2.50 - 3.50 / Piece

Supply Ability:10000Week

View details
IXFH16N120P
US $$2.35 - 2.50 / Piece

Supply Ability:1000Day

View details
IXFH16N120P
US $$4.50 - 5.00 / Piece

Supply Ability:1Day

View details
IXFH16N120P
US $$2.10 - 2.40 / Piece

Supply Ability:3Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IXFH20N80Q

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Hardware, Fasteners, Accessories(2239)

Connectors, Interconnects(19973)

Capacitors(4587)

Soldering, Desoldering, Rework Products(854)

Optoelectronics(3638)

Memory Cards, Modules(216)