IXFH20N80P Selling Leads, Price trend , Ixys, IXFH20N80P DataSheet download, circuit diagram from SeekIC.com

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IXFH20N80P: MOSFET 20 Amps 800V 0.52 Rds

IXFH20N80P Data Sheet

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Part Number:: IXFH20N80P
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.52 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-247
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.52 Ohms

Parameters:

Technical/Catalog Information	IXFH20N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	520 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	4685pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	86nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH20N80P IXFH20N80P

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IXFH20N80P

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