IXFH170N10P Selling Leads, Price trend , Ixys, IXFH170N10P DataSheet download, circuit diagram from SeekIC.com

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IXFH170N10P: MOSFET 170 Amps 100V 0.009 Rds

IXFH170N10P Data Sheet

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Part Number:: IXFH170N10P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	170 A
Resistance Drain-Source RDS (on) :	0.009 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.009 Ohms
Continuous Drain Current : 170 A
Packaging : Box

Parameters:

Technical/Catalog Information	IXFH170N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	170A
Rds On (Max) @ Id, Vgs	9 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6000pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	198nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH170N10P IXFH170N10P

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IXFH170N10P

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