IXFH16N90 Selling Leads, Price trend, IXFH16N90 DataSheet download, circuit diagram from SeekIC.com

Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to protect·Fast intrinsic RectifierApplication·DC-DC converters·Battery chargers·Switched-mode and res...

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SeekIC No. : 004381521 Detail

IXFH16N90: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS) rated·Low package inductance - easy to drive and to...

IXFH16N90 Data Sheet

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Part Number:: IXFH16N90
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Recent History
What is this?

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Product Details

Description

Features:

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
- easy to drive and to protect
·Fast intrinsic Rectifier

Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control
·Temperature and lighting controls

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C.R_GS=1M	900 900	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C T_C = 25°C pulse width limited by T_JM T_C = 25°C	16 64 16	A A A A
E_AR	T_C = 25°C	45	mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	360	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight		6	g

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IXFH16N90

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