IXFH15N80Q

MOSFET 800V 15A

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IXFH15N80Q Picture
SeekIC No. : 00159183 Detail

IXFH15N80Q: MOSFET 800V 15A

floor Price/Ceiling Price

Part Number:
IXFH15N80Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.6 Ohms
Package / Case : TO-247AD


Features:

• IXYS advanced low Qg process
• International standard packages
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Fast switching
• Molding epoxies meet UL 94 V-0 flammability classification



Application

• Easy to mount
• Space savings
• High power density



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
15
60
15
A
A
A


EAR
EAS

TC = 25°C
TC = 25°C
30
1.0

mJ
J

dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2
5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg
  -55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
Mounting torque
1.13/10
Nm/lb.in.
Nm/lb.in.
Weight TO-247
TO-268
6
4
g
g



Parameters:

Technical/Catalog InformationIXFH15N80Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs600 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4300pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH15N80Q
IXFH15N80Q



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