IXFH15N100 Selling Leads, Price trend , Ixys, IXFH15N100 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00159110 Detail

IXFH15N100: MOSFET 15 Amps 1000V 0.7 Rds

IXFH15N100 Data Sheet

Get Latest Price

Part Number:: IXFH15N100
Mfg:: Ixys
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

IXFH 18N60P evaluate
Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
IXFH 28N50F evaluate
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
IXFH/IXFM42N20 evaluate
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	15 A
Resistance Drain-Source RDS (on) :	0.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.7 Ohms
Package / Case : TO-247AD

Features:

International standard packages
Low R_{DS (on)} HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Temperature and lighting controls

Parameters:

Technical/Catalog Information	IXFH15N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH15N100 IXFH15N100

Customers Who Bought This Item Also Bought

IXFH120N20P
US $$2.20 - 2.50 / Piece

Supply Ability:8000Week

View details
IXFH13N50
US $$2.50 - 3.50 / Piece

Supply Ability:10000Week

View details
IXFH16N120P
US $$2.35 - 2.50 / Piece

Supply Ability:1000Day

View details
IXFH16N120P
US $$4.50 - 5.00 / Piece

Supply Ability:1Day

View details
IXFH16N120P
US $$2.10 - 2.40 / Piece

Supply Ability:3Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

IXFH15N100

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Kits(573)

Circuit Protection(3850)

Motors, Solenoids, Driver Boards/Modules(2035)

Cable Assemblies(5)

Filters(263)

Cables, Wires - Management(4448)