IXFH150N15P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 150 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.013 Ohms
Continuous Drain Current : 150 A
Packaging : Box


Features:






Specifications






Description

      The IXFH150N15P is designed as PolarHT hiperFET power MOSFET of N channel enhancement mode of which advantages include easy to mount, space savings and high power density.
      The IXFH26N50Q has three features. The first one is that it would have international standard packages. The next one is it would be unclamped inductive switching (UIS) rated. The next one is that it would have low package inductance which would means it is easy to drive and to protect. That are all the main features.
      Some absolute maximum ratings of IXFH26N50Q have been concluded into several points as follow. The first one is about its Vdss which would be 150V with condition of Tj = 25°C to 175°C. The second one is about its Vdgr which would be 150V with condition of Tj = 25°C to 175°C and Rgs = 1 M. The next one is about its Vgs continuous which would be +/- 20V. The next one is about its Vgsm transient which would be +/- 30V. The next one is about its Id25 which would be 150A with condition of Tc = 25°C. The next one is about its Id(rms) which would be 75A with condition of external lead current limit. The next one is about its Idm which would be 340A with condition of Tc = 25°C, pulse width limited by Tjm. The next one is about its Iar which would be 60A with condition of Tc = 25°C. The next one is about its Ear which would be 80mJ with condition of Tc = 25°C. The next one is about its Eas which would be 2.5J with condition of Tc = 25°C. The next one is about its Pd which would be 714W with condition of Tc = 25°C. The next one is about its Tj which would be from -55°C to +175°C. The next one is about its Tjm which would be 175°C. The next one is about its Tstg which would be from -55°C to +175°C. The next one is about its Tl which would be 300°C with condition of 1.6 mm (0.062 in.) from case for 10s. And so on. for more information please contact us.

Parameters:

Technical/Catalog Information	IXFH150N15P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	150A
Rds On (Max) @ Id, Vgs	13 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5800pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH150N15P IXFH150N15P