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IXFH14N80P

MOSFET DIODE Id14 BVdass800

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SeekIC No. : 00158376 Detail

IXFH14N80P: MOSFET DIODE Id14 BVdass800

IXFH14N80P Data Sheet

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Part Number:
IXFH14N80P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 14 A Resistance Drain-Source RDS (on) : 0.7 Ohms
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-247
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 14 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.7 Ohms


Parameters:

Technical/Catalog InformationIXFH14N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs720 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs61nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH14N80P
IXFH14N80P



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