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IXFH140N10P

MOSFET 140 Amps 100V 0.011 Rds

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SeekIC No. : 00154524 Detail

IXFH140N10P: MOSFET 140 Amps 100V 0.011 Rds

IXFH140N10P Data Sheet

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Part Number:
IXFH140N10P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-247
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.011 Ohms
Packaging : Box


Features:

·International standard packages
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect


Application

·Easy to mount
·Space savings
·High power density


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 100
100		 V
V

VGSM		   ±20
 V
ID25
ID(RMS)
IDM
 TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
 140
75
300		 A
A
IAR
EAR
EAS		 TC = 25°C
TC = 25°C
TC= 25°C		 60
80
2.5		 A
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 10 V/ns
PD TC = 25°C 600 W
TJ
TJM
Tstg		   -55 ... +175
175
-55 ... +150		 °C
°C
°C
TL
 1.6 mm (0.063 in.) from case for 10 s
 300
 °C
Md Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247
TO-268		 6.0
5.0		 g
g



Parameters:

Technical/Catalog InformationIXFH140N10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C140A
Rds On (Max) @ Id, Vgs11 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4700pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs155nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH140N10P
IXFH140N10P



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