IXFH12N50F

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-247AD


Description

The IXFH12N50F possesses N-channel enhancement mode; avalanche rated, low Qg, low intrinsic Rg; hign dv/dt, low trr which can be applicated in DC-DC converters; switched-mode and resonant-mode power supplies, >500kHz switching; DC choppers; 13.5 MHz industrial applications; pulse generation; laser drivers; RF amplifiers and it has the advantages of space savings and high power density.

The features of IXFH12N50F can be summarized as (1)RF capable MOSFETs; (2)double metal process for low gate resistance; (3)low RDS(on) HDMOSTM process; (4)rugged polysilicon gate cell structure; (5)unclamped inductive switching (UIS) rated; (6)low package inductance easy to drive and to protect; (7)fast intrinsic rectitier.

The absolute maximum ratings of IXFH12N50F are (1)VDSS TJ = 25°C to 150°C: 500V; (2)VDGR TJ = 25°C to 150°C: 500V; (3)VGS continuous: ±20V; (4)VGSM transient: ±30V; (5)ID25 TC =25: 12 A; (6)IDM TC = 25°C, pulse width limited by TJM: 48 A; (7)IAR TC = 25°C: 12 A; (8)EAR TC = 25°C: 20 mJ; (9)EAS TC = 25°C: 300 mJ; (10)dv/dt ISDM, di/dt100 A/s, VOD VDD VDSS TJ150°C, RG=2: 5V/ns; (11)PD TC = 25°C: 180W; (12)TJ: -55 yo+150 °C; (13)TJM: 150°C; (14)TSTG: -55 to+150 °C; (15)TL 1.6 mm (0.063 in.) from case for 10s: 300°C; (16)weight TO-247: 6g; TO-264: 4g.