MOSFET 10 Amps 1000V
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
Packaging : | Tube |
Technical/Catalog Information | IXFH10N100P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 3030pF @ 25V |
Power - Max | 380W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFH10N100P IXFH10N100P |