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IXFG55N50

MOSFET 48 Amps 500V 0.1 Rds

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SeekIC No. : 00159170 Detail

IXFG55N50: MOSFET 48 Amps 500V 0.1 Rds

IXFG55N50 Data Sheet

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Part Number:
IXFG55N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 48 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISO 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Continuous Drain Current : 48 A
Package / Case : ISO 264


Parameters:

Technical/Catalog InformationIXFG55N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C48A
Rds On (Max) @ Id, Vgs*
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CaseISO264?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFG55N50
IXFG55N50



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