MOSFET 40 Amps 1100V 0.2600 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1100 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 40 A | ||
Resistance Drain-Source RDS (on) : | 0.26 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | PLUS 264 | Packaging : | Tube |
Technical/Catalog Information | IXFB40N110P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1100V (1.1kV) |
Current - Continuous Drain (Id) @ 25° C | 40A |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 19000pF @ 25V |
Power - Max | 1250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 310nC @ 10V |
Package / Case | ISOPLUS264? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFB40N110P IXFB40N110P |