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IXFB210N20P

MOSFET 210 Amps 200V 0.0105 Rds

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SeekIC No. : 00150982 Detail

IXFB210N20P: MOSFET 210 Amps 200V 0.0105 Rds

IXFB210N20P Data Sheet

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Part Number:
IXFB210N20P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 210 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : PLUS-264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : PLUS-264
Resistance Drain-Source RDS (on) : 10.5 mOhms
Continuous Drain Current : 210 A


Parameters:

Technical/Catalog InformationIXFB210N20P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C210A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 18600pF @ 25V
Power - Max1500W
PackagingTube
Gate Charge (Qg) @ Vgs255nC @ 10V
Package / Case*
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFB210N20P
IXFB210N20P



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