IXER35N120D1

IGBT Transistors 1200V 50A

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IXER35N120D1 Picture
SeekIC No. : 00143957 Detail

IXER35N120D1: IGBT Transistors 1200V 50A

floor Price/Ceiling Price

Part Number:
IXER35N120D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.2 V Maximum Gate Emitter Voltage : 20 V
Gate-Emitter Leakage Current : 200 nA Power Dissipation : 200 W
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS 247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.2 V
Collector- Emitter Voltage VCEO Max : 1200 V
Power Dissipation : 200 W
Package / Case : ISOPLUS 247-3
Gate-Emitter Leakage Current : 200 nA


Features:

• NPT3 IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS 247TM package
- isolated back surface
- low coupling capacity between pins and heatsink
- high reliability
- industry standard outline





Application

• single switches
• choppers with complementary free wheeling diodes
• phaselegs, H bridges, three phase bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating





Specifications

Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ± 20 V
IC25 TC = 25°C 50 A
IC90 TC = 90°C 32 A
ICM VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A
VCEK RBSOA, Clamped inductive load; L = 100 µH VCES
tSC
(SCSOA)
VCE = 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
non-repetitive
10 µs
Ptot TC = 25°C 200 W





Description

The IXER35N120D1 has some features that:(1)low saturation voltage;(2)positive temperature coefficient for easy paralleling;(3)fast switching;(4)short tail current for optimized performance in resonant circuits;(5)fast reverse recovery;(6)low operating forward voltage;(7)low leakage current;(8)isolated back surface;(9)low coupling capacity between pins and heatsink;(10)high reliability;(11)industry standard outline.

The IXER35N120D1 can be used in single switches;choppers with complementary free wheeling diodes;phaselegs,H bridges,three phase bridges e.g. for power supplies,UPS and AC,DC and SR drives;induction heating.And the absolute maximum ratings of the IXER35N120D1 can be summarized as:(1)Vces: 1200 V;(2)Vges:±20 V;(3)Ic25:50 A;(4)Ic90:32 A;(5)Icm:50 A;(6)Vcek:Vces;(7)tSC:10 s;(8)Ptot(TC=25°C):200 W;(9)RthJH:1.2 K/W;(10)RthJC:0.6 K/W;(11)Iges(VCE=0 V;VGE=±20 V):200 nA.If you want to know more information about this part,please download the datasheet in www.seekdatasheet.com .






Parameters:

Technical/Catalog InformationIXER35N120D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 35A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseISOPLUS247?
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXER35N120D1
IXER35N120D1



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