IGBT Transistors 40 Amps 1200V
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
Packaging : | Tube |
Symbol | Conditions | Maximum | Ratings |
VCES | TVJ = 25°C to 150°C | 1200 | V |
VGES | ± 20 | V | |
IC25 | TC = 25°C | 60 | A |
IC90 | TC = 90°C | 40 | A |
ICM | VGE = ±15 V; RG = 39 Ω; TVJ = 125°C | 50 | A |
VCEK | RBSOA, Clamped inductive load; L = 100 µH | VCES | |
tSC (SCSOA) |
VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive |
10 | µs |
Ptot | TC = 25°C | 300 | W |
Technical/Catalog Information | IXEH40N120 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 40A |
Power - Max | 300W |
Mounting Type | Through Hole |
Package / Case | TO-247AD |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXEH40N120 IXEH40N120 |