Features: · NPT IGBT technology· low saturation voltage· low switching losses· square RBSOA, no latch up· high short circuit capability· positive temperature coefficient for easy paralleling· MOS input, voltage controlled· optional ultra fast diode· International standard packagesApplication· AC m...
IXDT30N120D1: Features: · NPT IGBT technology· low saturation voltage· low switching losses· square RBSOA, no latch up· high short circuit capability· positive temperature coefficient for easy paralleling· MOS in...
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Symbol |
Test Conditions |
Maximum |
Ratings |
VCES VCGR |
TJ = 25to 150 TJ = 25 to 150; RGE = 1 M |
1200 1200 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 IDM |
TC = 25 TC = 90 TC = 90, tp = 1 ms |
60 38 70 |
A A A |
RBSOA |
V = ±15 V, T = 125, R = 47 Clamped inductive load, L = 30 µH |
ICM = 50 VCEK < VCES |
A |
tSC (SCSOA) |
VGE = ±15 V, VCE = VCES, TJ = 125 RG = 47, non repetitive |
10 |
µs |
PC |
TC = 25 IGBT Diode |
300 135 |
W W |
TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
-55 ... +150 150 -55 ... +150 300 |
| |
Md |
Mounting torque |
1.1/10 |
Nm/lb.in. |
Weight |
6 |
g |