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IXDR30N120D1

IGBT Transistors 30 Amps 1200V

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SeekIC No. : 00143470 Detail

IXDR30N120D1: IGBT Transistors 30 Amps 1200V

IXDR30N120D1 Data Sheet

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Part Number:
IXDR30N120D1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.4 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : ISOPLUS247-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Collector-Emitter Saturation Voltage : 2.4 V
Package / Case : ISOPLUS247-3


Parameters:

Technical/Catalog InformationIXDR30N120D1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 30A
Power - Max200W
Mounting TypeThrough Hole
Package / CaseISOPLUS247?
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDR30N120D1
IXDR30N120D1



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