IGBT Transistors 35 Amps 600V
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-220-3 |
Packaging : | Tube |
Symbol | Conditions | Maximum | Ratings |
VCES | TJ = 25 to 150 | 600 | v |
VCGR | TJ = 25 to 150; RGE = 20K | 600 | v |
VGES | Continuous | ±20 | V |
VGEM | Transient | ±30 | V |
IC25 | TC = 25, | 60 | A |
IC90 | TC = 90 | 35 | A |
ICM | TC = 90°C,tp= 1 ms | 70 | A |
RBSOA | VGE= 15 V, TVJ = 125, RG = 10 Clamped inductive load, L = 30 H |
ICM =110 VCEK < VCES |
A |
TSC (SCSOA) |
VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 Ω non repetitive |
10 | µs |
PC | TC = 25IGBT Diode |
250 80 |
W W |
TJ | -55 ... +150 | ||
TJM | -55 ... +150 | ||
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | ||
Md | Mounting torque TO-220 TO-247 |
0.4 - 0.6 0.8 - 1.2 |
Nm Nm |
Weight | TO-247 | 6 |
g |
Technical/Catalog Information | IXDP35N60B |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
Power - Max | 250W |
Mounting Type | Through Hole |
Package / Case | TO-220AB |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXDP35N60B IXDP35N60B |