IXDP35N60B

IGBT Transistors 35 Amps 600V

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SeekIC No. : 00143017 Detail

IXDP35N60B: IGBT Transistors 35 Amps 600V

floor Price/Ceiling Price

Part Number:
IXDP35N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-220-3
Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3


Features:

·NPT IGBT technology
·low switching losses
·low tail current
·no latch up
·short circuit capability
·positive temperature coefficient for easy paralleling
·MOS input, voltage controlled
·optional ultra fast diode
·International standard package

 




Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninteruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies



Specifications

Symbol Conditions Maximum Ratings
VCES TJ = 25 to 150 600 v
VCGR TJ = 25 to 150; RGE = 20K 600 v
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25, 60 A
IC90 TC = 90 35 A
ICM TC = 90°C,tp= 1 ms 70 A
RBSOA VGE= 15 V, TVJ = 125, RG = 10
Clamped inductive load, L = 30 H
ICM =110
VCEK < VCES
A
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10 µs
PC TC = 25IGBT
Diode
250
80
W
W
TJ   -55 ... +150
TJM   -55 ... +150
  Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
Md Mounting torque TO-220
TO-247
0.4 - 0.6
0.8 - 1.2
Nm
Nm
Weight TO-247 6
g



Parameters:

Technical/Catalog InformationIXDP35N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 35A
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXDP35N60B
IXDP35N60B



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