IGBT Transistors 75 Amps 1200V
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Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-227B-4 |
Packaging : | Tube |
Symbol | Conditions | Maximum | Ratings |
VCES VCGR VGES VGEM |
TJ = 25 to 150 TJ = 25 to 150; RGE = 20 k Continuous Transient |
1200 1200 ±20 ±30 |
V V V V |
IC25 IC90 ICM |
TC = 25 TC = 90 TC = 90, tp = 1 ms |
150 95 190 |
A A A |
RBSOA | VGE = ±15 V, TJ = 125, RG = 15 Clamped inductive load, L = 30 µH |
ICM = 150 VCEK < VCES |
A |
tSC (SCSOA) |
VGE = ±15 V, VCE = VCES, TJ = 125 RG = 15 , non repetitive |
10 | µs |
PC VISOL |
TC = 25°C IGBT 50/60 Hz; IISOL 1 mA |
660 2500 |
W V~ |
TJ Tstg |
-40 ... +150 -40 ... +150 |
| | |
Md | Mounting torque Terminal connection torque (M4) |
1.5/13 1.5/13 |
Nm/lb.in. Nm/lb.in. |
Weight | 30 | g |