IGBT Transistors 55 Amps 1200V
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| Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 1200 V |
| Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-227B-4 |
| Packaging : | Tube |