Features: · NPT IGBT technology· low saturation voltage· low switching losses· square RBSOA, no latch up· high short circuit capability· positive temperature coefficient for easy paralleling· MOS input, voltage controlled· optional ultra fast diode· International standard package miniBLOCApplicati...
IXDN55N120: Features: · NPT IGBT technology· low saturation voltage· low switching losses· square RBSOA, no latch up· high short circuit capability· positive temperature coefficient for easy paralleling· MOS in...
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Symbol | Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 TJ = 25 to 150; RGE = 20 k |
1200 1200 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
IC25 IC90 ICM |
TC = 25 TC = 90 TC = 90, tp = 1 ms |
100 62 124 |
A A A |